 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Data Sheet No. PD60168-D IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features * * * * * * Over temperature shutdown Over current shutdown Active clamp Input referenced to + Vcc E.S.D protection Input referenced to Vcc Product Summary Rds(on) V clamp Ishutdown Vcc (op.) 6.0m (max) 40V 100A 5.5 - 18V Description The IPS5551T is a fully protected three terminal high side switch with built-in short-circuit, over-temperature, ESD protection, inductive load capability. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified threshold, the output power MOSFET is turned on. When the Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned off. Input noise immunity is improved by an hysterisis. When the input is left floating, an internal current source pulls it up to Vcc. The over-current protection latches off the high side switch if the output current exceeds the specified Isd. The over-temperature protection latches off the switch if the junction temperature exceeds the specified value Tsd. The device is reset by opening the input pin high. Truth Table Op. Conditions Normal Normal Over current Over current Over-temperature Over-temperature In L H L H L H (3) Out H L L (latched) L L (latched) L Typical Connection (3) In is referenced to Vcc. In = L means (Vcc -Vin) >Vih In = H means (Vcc - Vin) + VCC Vcc Input signal Logic control Out In Load (Refer to lead assignment for correct pin configuration) SUPER TO220 www.irf.com 1 IPS5551T Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (Tj = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 70m copper thickness Symbol Parameter Min. -0.3 -0.3 -1 -0.3 -- -- -- -- -- -- -55 -40 -- Max. 30 40 20 40 2.8 Units V mA V Test Conditions Vcc -Vin max Maximum input voltage Vcc -Vin1 max Max. transient Input voltage (less than 1s) Iin max Maximum input current Vcc -Vout max Maximum output voltage Isd cont. Diode max. continuous current (1) (rth = 62oC/W) Isd1 cont. Isd pulsed Pd ESD1 ESD2 T stor. Tj max. Tlead Diode max. continuous current (1) (rth = 5oC/W) A 35 100 2 tbd tbd 150 150 300 o Diode max. pulsed current (1) Power dissipation (rth = 62oC/W) Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature Lead temperature (soldering 10 seconds) W C = 100 pF, R = 1500 kV C = 200 pF, R = 0, L=10H C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth 1 2 3 4 Thermal Thermal Thermal Thermal resistance resistance resistance resistance free air with standard footprint with 1" footprint junction to case Typ. 60 60 35 0.7 Max. Units Test Conditions o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Continuous input voltage Supply to power ground voltage Continuous output current (rth c/amb. < 5oC/W, Tj = 125oC) Continuous output current o Tamb=85 C (TAmbient = 85oC, Tj = 125oC, free air) Vcc - Vin Vcc Iout I out Min. 6 6 -- -- Max. 18 18 35 8 Units V A (1) Limited by junction temperature. Pulsed current is also limited by wiring 2 www.irf.com IPS5551T Static Electrical Characteristics (Tj = 25oC and Vcc = 14V unless otherwise specified.) Symbol Parameter Rds(on) 1 ON state resistance Rds(on) 2 Rds(on) 3 Vclamp 1 Vclamp 2 Vsd Vcc (op) Iq Iin Iin, on Vih Vil Vhys ON state resistance ON state resistance Tj = 150oC Vcc to Vout active clamp voltage Vcc to Vout active clamp voltage Body diode forward voltage Operating voltage range Quiescent current Input current Input current when ON High level input threshold voltage Low level input threshold voltage Input hysterisis Min. -- -- -- 35 -- -- 5.5 -- 3 -- -- 3 0.3 Typ. Max. 4.6 4.6 7.4 40 42 0.85 -- 13 6.5 1.3 4.75 4.05 0.6 6.0 -- -- -- 48 1 28 50 12 -- 5.5 -- 1.5 Units Test Conditions m Iout=35A,Vcc -Vin=12V see Fig. 6 Iout=17A, Vcc -Vin= 6V Iout = 35A, Tj = 150oC Iout = 10mA Iout = 35A - t < 100us Id = 35A, Vcc -Vin = 0V Vcc-Vin=0V,Vcc-Vout= 12V Vcc - Vin = 14V Vcc - Vin = Vih Vcc - Vin (note 2) Vcc - Vin (note 2) V A mA V Switching Electrical Characteristics Vcc = 14V, Resistive Load = 0.4, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Tr 1 Tr 2 dV/dt (on) Eon Td off Tf dV/dt (off) Eoff Turn-on delay time to Vcc -Vout = 0.9 V cc Rise time to Vcc -Vout = 5 V Rise time from the end of Tr1 to Vcc -Vout = 0.1 Vcc Turn on dV/dt Turn ON energy Turn-off delay time Vcc -Vout = 0.1 Vcc Fall time to Vcc -Vout = 0.9 Vcc Turn OFF dV/dt Turn OFF energy Min. -- -- -- -- -- -- -- -- -- Typ. Max. Units Test Conditions 10 16 200 1.2 25 130 25 2 6 30 50 400 5 -- 300 50 6 -- V/s mJ s V/s mJ See figure 3 s See figure 2 Protection Characteristics Tj = 25oC, and Vcc = 14V (unless otherwise specified). Symbol Parameter T sd I sd Treset Over temperature shutdown threshold Over current shutdown threshold Minimum time for protection reset Min. -- 60 -- Typ. 165 100 50 Max. Units Test Conditions -- 150 -- o C A s See fig. 4 (2) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common between the load current path and the input signal path can significantly affect the thresholds. www.irf.com 3 IPS5551T Functional Block Diagram VCC 40V clamp Charge pump 10k 6mA + 4.7V 35V 4.1V - IN S R Q Level shift driver Over curren + + - 100A Tj 165C Over temperatur VOUT Lead Assignments 2 (Vcc) 123 In Vcc Out Super TO220 4 www.irf.com IPS5551T Vcc-Vin Vcc-Vin max Vcc-Vin1 max Vcc-Vin (op) Vih Vil Vhys Iin Iin Vcc In IPS 5551 Vcc-Vout Vcc-Vout max Vclamp1 Vclamp2 Vcc-Vin Vcc 90% max Iin1,2 Iin(on) Out Iout Iout max -Ids cont. -Ids pulsed Iout 85C Isd Iq Vcc-Vout 5V 10 % DV/dt(on) Td on Tr1 Tr2 Figure 1 - Voltages and currents definition Figure 2 - Switching time definitions (turn-on) Vcc-Vin Vcc-Vin 12V 0V 90% Iout OI shutdown Isd t < T reset t > T reset Vcc-Vout 10 % DV/dt(off) Td off Tf Tj OT shutdown Tjsd Figure 3 - Switching time definitions (turn-off) Figure 4 - Protection timing diagram www.irf.com 5 IPS5551T T clamp Vcc - Vin POWER Iout Iou Vclamp Vcc - Vout ( Vcc ) Measurement ( see Appl . Notes to evaluate power dissipation ) Figure 5 - Active clamp waveforms Figure 6 - Rds(on) measurement schematic 6 5 4 3 2 200 150 100 1 0 0 5 10 15 20 50 -5 0 0 50 100 150 Figure 7 - Rds(on) (m) Vs Vcc- Vin (V) Figure 8 - Normalized Rds(on) (%) Vs Tj (oC) 6 www.irf.com IPS5551T 5 1000 4 single pulse 10 Hz rth=60C/W dT=25C 100Hz rth=60C/W dT=25C 100 3 2 10 1 1 0 0 20 40 60 80 100 0.1 0 .00 1 0 .01 0 .1 1 10 Figure 9 - Rds(on) (m) Vs I out (A) Figure 10 - Iclamp (A) Vs Inductive Load (H) 100 Limited by package 1000 80 Rthc/amb= 1C/W Current path capability should be above this curve 100 60 Rthc/amb= 5C/W Rthc/amb= 10C/W Rthc/amb= 20C/W 40 Load characteristic should be below this curve Tj = 25 c 20 free air Free air 10 0 25 50 75 100 125 150 Figure 12 - Iout (A) Vs Protection resp. Time (ms) Figure 11 - Max. load current (A) Vs Temperature (oC) www.irf.com 7 IPS5551T 120 100 80 1 .0 0 E +0 2 Free air 1 .0 0 E +0 1 1inch PCB 1 .0 0 E +0 0 60 1 .0 0 E - 0 1 Infinite heatsink 40 20 0 -50 1 .0 0 E - 0 2 1 .0 0 E - 0 3 0 50 100 150 1E-05 1E-04 0.001 0.01 0.1 1 10 100 1000 Figure 13 - Isd (A) Vs Tj (oC) Figure 14 - Transient thermal impedance (oC/W) Vs Time (s) 100 10 8 10 6 4 1 2 0 -50 0.1 0 5 10 15 20 25 30 35 -25 0 25 50 75 100 125 150 Figure 15 - Icc (mA) Vs Vcc-Vin (V) Figure 16 - Iin (mA) Vs Tj (oC) 8 www.irf.com IPS5551T 5 100 Eon 4 80 Eoff 3 VIH VIL Hysteresis 60 2 40 1 20 0 -50 0 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 Figure 17 - Vih, Vil threshold (V) Vs Tj (oC) Figure 18 - Eon, Eoff (mJ) Vs Iout (A) 100.00 I=Imax vs L (see fig.10) 10.00 30A I=10A 1.00 0.10 0.01 1E+01 1E+02 1E+03 1E+04 1E+05 1E+06 Figure 19 - E on (mJ) Vs Inductive load (H) (Vcc = 14V, R load =0.5) www.irf.com 9 IPS5551T DZ1 VCC R1 IN D2 IPS5551 OUT 12V Battery on off LOAD System ground DZ1, R1 : optional additional voltage transient protection D2 : optional additional reverse battery protection See application note for details Power ground Figure 20 - Automotive typical connection Case outline Super TO220 A 11.00 [.433] 10.00 [.394] 5.00 [.196] 4.00 [.158] B 9.00 [.354] 8.00 [.315] 0.25 [.010] BA 1.50 [.059] 0.50 [.020] 4 15.00 [.590] 14.00 [.552] 13.50 [.531] 12.50 [.493] 1 2 3 LEAD AS S IGNMENTS MOS F ET 4.00 [.157] 3.50 [.138] 14.50 [.570] 13.00 [.512] IGBT 1 - GATE 2 - COLLECTOR 3 - EMIT TER 4 - COLLECTOR 1 - GATE 2 - DRAIN 3 - S OURCE 4 - DRAIN 4X 1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099] 3X 2.55 [.100] 2X 1.30 [.051] 0.90 [.036] BA OS 1. 2. 3. 4. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. CONTROLLING DIMENSION: MILLIMET ER. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. OUT LINE CONFORMS TO JEDEC OUT LINE T O-273AA. 0.25 [.010] 01-3073 02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/21/2002 10 www.irf.com |
Price & Availability of IPS5551T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |